absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 14 i d @ v gs = 10v, t c = 100c continuous drain current 9.0 i dm pulsed drain current ? 56 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 700 mj i ar avalanche current ? 14 a e ar repetitive avalanche energy ? 15 mj dv/dt p eak diode recovery dv/dt ? 4.0 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300(for 5 seconds) weight 2.6 (typical) g pd - 91551c hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state re- sistance combined with high transconductance. hexfet transistors also feature all of the well-established advan- tages of mosfets, such as voltage control, very fast switch- ing, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switch- ing power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. o c a power mosfet surface mount(smd-1) 1/25/01 www.irf.com 1 smd-1 product summary part number r ds(on) i d IRFN350 0.315 ? 14a features: simple drive requirements ease of paralleling hermetically sealed electrically isolated surface mount dynamic dv/dt rating light-weight for footnotes refer to the last page IRFN350 jantx2n7227u jantxv2n7227u ref:mil-prf-19500/592 400v, n-channel hexfet ? mosfet technology
IRFN350 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 400 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.46 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.315 v gs = 10v, i d = 9.0a resistance ? ? 0.415 v gs = 10v, i d = 14a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.0 ? ? s ( )v ds > 15v, i ds = 9.0a ? i dss zero gate voltage drain current ? ? 25 v ds = 320v ,v gs =0v ? ? 250 v ds = 320v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 110 v gs =10v, i d = 14a q gs gate-to-source charge ? ? 18 nc v ds =200v q gd gate-to-drain (?miller?) charge ? ? 65 t d (on) turn-on delay time ? ? 35 v dd = 200v, i d = 14a, t r rise time ? ? 190 v gs =10v, r g = 2.35 ? t d (off) turn-off delay time ? ? 170 t f fall time ? ? 130 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 2600 ? v gs = 0v, v ds = 25v c oss output capacitance ? 680 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 250 ? na ? ? nh ns a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.83 r thj-pcb junction-to-pc board ? 3.0 ? soldered to a copper-clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 14 i sm pulse source current (body diode) ? ?? 56 v sd diode forward voltage ? ? 1.7 v t j = 25c, i s = 14a, v gs = 0v ? t rr reverse recovery time ? ? 1200 ns t j = 25c, i f = 14a, di/dt 100a/ s q rr reverse recovery charge ? ? 11 c v dd 30v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from the center of drain pad to center of source pad. ?
www.irf.com 3 IRFN350 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
IRFN350 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 13a & b
www.irf.com 5 IRFN350 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
IRFN350 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1 0 .
www.irf.com 7 IRFN350 ? i sd 14a, di/dt 145a/ s, v dd 400v, t j 150 c ? pulse width 300 s; duty cycle 2% ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25 c, l= 7.1mh peak i l = 14a, v gs = 10v footnotes: case outline and dimensions ? smd-1 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/02 p ad assignments 1- drain 2- gate 3- source
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